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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2581192687132630243</id><published>2012-02-02T08:33:00.001+09:00</published><updated>2012-02-02T08:33:56.437+09:00</updated><title type='text'>LED products make up 18% of lighting sales at Philips</title><content type='html'>&lt;p&gt;&lt;a href="http://www.ledsmagazine.com/news/9/2/1"&gt;LEDs Magazine - LED products make up 18% of lighting sales at Philips&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2581192687132630243?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2581192687132630243/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7661348563126948419</id><published>2012-02-01T16:44:00.001+09:00</published><updated>2012-02-01T16:44:05.530+09:00</updated><title type='text'>ダイヤモンドバイポーラトランジスタの開発</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/aistinfo/aist_today/vol12_02/p14.html"&gt;産総研 TODAY 2012.02 VOL.12-02&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;ダイヤモンドバイポーラトランジスタの開発&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-7661348563126948419?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/7661348563126948419/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-4643261109471473257</id><published>2012-02-01T16:43:00.003+09:00</published><updated>2012-02-01T16:43:40.830+09:00</updated><title type='text'>高い熱伝導率をもつ窒化ケイ素セラミックス</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/aistinfo/aist_today/vol12_02/p16.html"&gt;産総研 TODAY 2012.02 VOL.12-02&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;高い熱伝導率をもつ窒化ケイ素セラミックス&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-4643261109471473257?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/4643261109471473257/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2896423398787935247</id><published>2012-02-01T16:43:00.001+09:00</published><updated>2012-02-01T16:43:09.411+09:00</updated><title type='text'>CNTを簡便・迅速・精密に構造分離</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/research/patent/2012/02_1/index.html"&gt;CNTを簡便・迅速・精密に構造分離&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2896423398787935247?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2896423398787935247/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2688192307814811550</id><published>2012-02-01T09:41:00.001+09:00</published><updated>2012-02-01T09:41:07.455+09:00</updated><title type='text'>新たなグラフェンコーティング技術を開発</title><content type='html'>&lt;p&gt;&lt;a href="http://www.hellodd.com/japan/news/news_view.asp?t=dd_jp_news&amp;amp;menu=&amp;amp;mark=2811"&gt;HelloDD.com/japan/&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;新たなグラフェンコーティング技術を開発&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2688192307814811550?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2688192307814811550/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=2688192307814811550' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2688192307814811550'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2688192307814811550'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/02/blog-post.html' title='新たなグラフェンコーティング技術を開発'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5408308865742055081</id><published>2012-01-31T13:29:00.001+09:00</published><updated>2012-01-31T13:29:10.289+09:00</updated><title type='text'>CNTトランジスタ、シリコンを上回る性能</title><content type='html'>&lt;p&gt;&lt;a href="http://japan.cnet.com/news/service/35013599/"&gt;CNTトランジスタ、シリコンを上回る性能--IBMが明らかに - CNET Japan&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5408308865742055081?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5408308865742055081/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5360359668082627578</id><published>2012-01-31T08:12:00.001+09:00</published><updated>2012-01-31T08:12:50.703+09:00</updated><title type='text'>Increased mobility and reduced residual electron concentration indium nitride</title><content type='html'>&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/PU_300112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;Increased mobility and reduced residual electron concentration indium nitride&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5360359668082627578?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' 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href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=4488057640472408161' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4488057640472408161'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4488057640472408161'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/graphene-could-be-perfect-absorber-of.html' title='Graphene could be a perfect absorber of light'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1615107068135187803</id><published>2012-01-27T08:09:00.001+09:00</published><updated>2012-01-31T08:11:55.242+09:00</updated><title type='text'>Low-profile SiC MOSFET modules with multiple circuit topologies</title><content type='html'>&lt;p&gt;&lt;a href="http://www.compoundsemiconductor.net/csc/news-details/id/19734519/name/Low-profile-SiC-MOSFET-modules-with-multiple-circuit-topologies.html"&gt;Low-profile SiC MOSFET modules with multiple circuit topologies&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/POWEREX_260112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;Powerex launches low-profile SiC MOSFET modules with multiple circuit topologies&lt;/p&gt;&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://news.thomasnet.com/fullstory/Low-Profile-SiC-MOSFET-Modules-have-multiple-circuit-topologies-608769"&gt;Low-Profile SiC MOSFET Modules have multiple circuit topologies., Powerex, Inc.&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-1615107068135187803?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/1615107068135187803/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=1615107068135187803' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1615107068135187803'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1615107068135187803'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/low-profile-sic-mosfet-modules-with.html' title='Low-profile SiC MOSFET modules with multiple circuit topologies'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-642490505475225185</id><published>2012-01-25T14:49:00.001+09:00</published><updated>2012-01-25T14:49:04.581+09:00</updated><title type='text'>Cheaper and purer silicon carbide</title><content type='html'>&lt;p&gt;&lt;a href="http://www.electronicsnews.com.au/news/cheaper-and-purer-silicon-carbide"&gt;Cheaper and purer silicon carbide | Electronics News&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-642490505475225185?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/642490505475225185/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=642490505475225185' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/642490505475225185'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/642490505475225185'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/cheaper-and-purer-silicon-carbide.html' title='Cheaper and purer silicon carbide'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1631562671466858696</id><published>2012-01-25T14:47:00.001+09:00</published><updated>2012-01-31T08:08:18.144+09:00</updated><title type='text'>AIXTRON sells SiC CVD tool to United Silicon Carbide</title><content type='html'>&lt;p&gt;&lt;a href="http://www.electroiq.com/articles/sst/2012/01/aixtron-sells-sic-cvd-tool-to-united-silicon-carbide.html"&gt;AIXTRON sells SiC CVD tool to United Silicon Carbide - ElectroIQ&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.compoundsemi.com/documents/articles/gsedoc/121274.html"&gt;Compound Semiconductors Online - Documents&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-1631562671466858696?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/1631562671466858696/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=1631562671466858696' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1631562671466858696'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1631562671466858696'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/aixtron-sells-sic-cvd-tool-to-united.html' title='AIXTRON sells SiC CVD tool to United Silicon Carbide'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-4567031196182630282</id><published>2012-01-25T08:35:00.001+09:00</published><updated>2012-01-31T08:12:23.718+09:00</updated><title type='text'>低コスト大口径ＧａＮ基板の製造に成功</title><content type='html'>&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=301335&amp;amp;lindID=1"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;住友電工と仏ソイテック社、低コスト大口径ＧａＮ基板の製造に成功&lt;/p&gt;&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://www.renewableenergyworld.com/rea/news/article/2012/01/from-soitec-and-sumitomo-new-gallium-nitride-tech-for-solar-and-led"&gt;From Soitec and Sumitomo: New Gallium-Nitride Tech for Solar and LED | Renewable Energy News Article&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.nikkan.co.jp/news/nkx0820120126cbam.html"&gt;住友電工、窒化ガリ基板量産－１３年度から仏社と低価格化技術:日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20120125/203972/?ST=device&amp;amp;ref=rss"&gt;口径6インチも視野、安価な薄膜GaN基板のパイロット製造ラインを住友電工らが整備開始 - 電子部品 - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.eetimes.com/electronics-news/4235166/Soitec-Sumitomo-GaN-wafers"&gt;Soitec, Sumitomo offer GaN wafers&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-4567031196182630282?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/4567031196182630282/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=4567031196182630282' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4567031196182630282'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4567031196182630282'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_25.html' title='低コスト大口径ＧａＮ基板の製造に成功'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2954788331778511686</id><published>2012-01-24T12:58:00.001+09:00</published><updated>2012-01-31T08:11:37.073+09:00</updated><title type='text'>SiCパワー半導体の第2弾を発表</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20120124/203871/"&gt;「これでSiCデバイスがすぐに使えます」、ルネサスがSiCパワー半導体の第2弾を発表 - 電子部品 - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="mj-articles"&gt;http://journal.mycom.co.jp/news/2012/01/25/009/index.html&lt;/div&gt;&lt;p&gt;&lt;script src="http://api.journal.mycom.co.jp/tensai/mj-tensai-single.js" type="text/javascript"&gt;&lt;/script&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/RENESAS_240112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;Renesas launches second series of low-loss SiC power devices integrating power conversion circuit in single package&lt;/p&gt;&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://www.azom.com/news.aspx?newsID=31705"&gt;Renesas Introduces Silicon Carbide Schottky Barrier Diode&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://microelectronics.cbronline.com/news/renesas-introduces-three-new-sic-compound-power-devices-250112"&gt;Renesas introduces three new SiC compound power devices - Computer Business Review&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://pr.efytimes.com/e1/77683/Renesas-Electronics-Announces-LowLoss-Silicon-Carbide-Power-Device-Series"&gt;Renesas Electronics Announces Low-Loss Silicon Carbide Power Device Series&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.asahi.com/digital/nikkanko/NKK201201300021.html"&gt;朝日新聞デジタル：ルネサスエレクトロニクス、回路設計の煩雑さを解消したパワー半導体 - 日刊工業新聞ニュース - デジタル&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2954788331778511686?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2954788331778511686/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=2954788331778511686' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2954788331778511686'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2954788331778511686'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/sic2.html' title='SiCパワー半導体の第2弾を発表'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-102984445170132493</id><published>2012-01-23T08:00:00.001+09:00</published><updated>2012-01-23T08:00:02.233+09:00</updated><title type='text'>Aluminum oxide passivation reduces off-current in AlN/GaN transistors</title><content type='html'>&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/UHK_200112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;Aluminum oxide passivation reduces off-current in AlN/GaN transistors&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-102984445170132493?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/102984445170132493/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=102984445170132493' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/102984445170132493'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/102984445170132493'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/aluminum-oxide-passivation-reduces-off.html' title='Aluminum oxide passivation reduces off-current in AlN/GaN transistors'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6139661131240542078</id><published>2012-01-19T14:28:00.001+09:00</published><updated>2012-01-20T09:23:59.583+09:00</updated><title type='text'>パワー半導体の世界市場は13年から増加へ</title><content type='html'>&lt;p&gt;&lt;a href="http://eetimes.jp/ee/articles/1201/19/news045.html"&gt;ビジネスニュース 市場予測：パワー半導体の世界市場は13年から増加へ、17年には261億ドルまで拡大 - EE Times Japan&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://response.jp/article/2012/01/20/168672.html"&gt;パワー半導体世界市場、2017年には261億ドルに拡大&amp;hellip;矢野経済研究所 | レスポンス (ビジネス、海外マーケットのニュース)&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-6139661131240542078?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5778696007414492764</id><published>2012-01-19T11:50:00.001+09:00</published><updated>2012-01-19T11:50:56.395+09:00</updated><title type='text'>SiCデバイス搭載のEV用電動システムが進化、容積を従来比で40％削減</title><content type='html'>&lt;p&gt;&lt;a href="http://eetimes.jp/ee/articles/1201/19/news019.html"&gt;カーエレ展/EV・HEV展：SiCデバイス搭載のEV用電動システムが進化、容積を従来比で40％削減 - EE Times Japan&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5778696007414492764?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5778696007414492764/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2868524185536940305</id><published>2012-01-19T08:51:00.001+09:00</published><updated>2012-01-19T08:51:17.647+09:00</updated><title type='text'>耐熱２５０度Ｃのパワー半導体向け封止材を開発</title><content type='html'>&lt;p&gt;&lt;a href="http://www.nikkan.co.jp/news/nkx0820120119cbap.html?news-t0119"&gt;日本触媒、耐熱２５０度Ｃのパワー半導体向け封止材を開発:日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2868524185536940305?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2868524185536940305/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=2868524185536940305' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2868524185536940305'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2868524185536940305'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_223.html' title='耐熱２５０度Ｃのパワー半導体向け封止材を開発'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-3645654599899039196</id><published>2012-01-19T07:58:00.001+09:00</published><updated>2012-01-23T08:00:59.195+09:00</updated><title type='text'>SiC and silicon combined produce ultra-high performance MOSFETs</title><content type='html'>&lt;p&gt;&lt;a href="http://www.compoundsemiconductor.net/csc/news-details/id/19734484/name/SiC-and-silicon-combined-produce-ultrahigh-performance-MOSFETs.html"&gt;SiC and silicon combined produce ultra-high performance MOSFETs&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.eeherald.com/section/new-products/nps201201203.html"&gt;1200V SiC cascode power MOSFET performs far superior than others switches, claims AoS&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-3645654599899039196?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/3645654599899039196/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=3645654599899039196' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/3645654599899039196'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/3645654599899039196'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/sic-and-silicon-combined-produce-ultra.html' title='SiC and silicon combined produce ultra-high performance MOSFETs'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-8694816996557129605</id><published>2012-01-19T07:57:00.001+09:00</published><updated>2012-01-19T07:57:30.466+09:00</updated><title type='text'>グリーン・ナノエレクトロニクスのコア技術開発に関する国際シンポジウム</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/event/ev2012/ev20120314/ev20120314.html"&gt;2012年3月14日　グリーン・ナノエレクトロニクスのコア技術開発に関する国際シンポジウム&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-8694816996557129605?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/8694816996557129605/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8694816996557129605' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8694816996557129605'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8694816996557129605'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_6642.html' title='グリーン・ナノエレクトロニクスのコア技術開発に関する国際シンポジウム'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1957323150425152815</id><published>2012-01-19T07:56:00.001+09:00</published><updated>2012-01-24T15:17:56.375+09:00</updated><title type='text'>フェムト秒レーザーによる酸化グラフェンの非熱的還元を提案</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/press_release/pr2012/pr20120118/pr20120118.html"&gt;産総研：フェムト秒レーザーによる酸化グラフェンの非熱的還元を提案&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=300839&amp;amp;lindID=5"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;産総研、フェムト秒レーザーによる酸化グラフェンの非熱的還元を提案&lt;/p&gt;&lt;/blockquote&gt;&lt;div class="mj-articles"&gt;http://journal.mycom.co.jp/news/2012/01/18/090/index.html&lt;/div&gt;&lt;p&gt;&lt;script src="http://api.journal.mycom.co.jp/tensai/mj-tensai-single.js" type="text/javascript"&gt;&lt;/script&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-1957323150425152815?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/1957323150425152815/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=1957323150425152815' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1957323150425152815'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1957323150425152815'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_19.html' title='フェムト秒レーザーによる酸化グラフェンの非熱的還元を提案'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-3223377243300726564</id><published>2012-01-18T08:11:00.001+09:00</published><updated>2012-01-18T08:11:52.305+09:00</updated><title type='text'>Renesas samples low-loss SiC power devices integrating power conversion circuit on-chip</title><content type='html'>&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/RENESAS_170112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;Renesas samples low-loss SiC power devices integrating power conversion circuit on-chip&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://www.4-traders.com/RENESAS-ELECTRONICS-6496219/news/RENESAS-ELECTRONICS-Announces-Low-Loss-Silicon-Carbide-SiC-Power-Devices-Integrating-Power-Conversio-13971617/"&gt;Renesas Electronics : Announces Low-Loss Silicon Carbide (SiC) Power Devices Integrating Power Conversion Circuit in Single Chip | 4-Traders&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-3223377243300726564?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/3223377243300726564/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=3223377243300726564' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/3223377243300726564'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/3223377243300726564'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/renesas-samples-low-loss-sic-power.html' title='Renesas samples low-loss SiC power devices integrating power conversion circuit on-chip'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1946006747657022440</id><published>2012-01-18T08:10:00.003+09:00</published><updated>2012-01-18T08:10:52.065+09:00</updated><title type='text'>USCi to develop next generation SiC devices with Aixtron tool</title><content type='html'>&lt;p&gt;&lt;a href="http://www.compoundsemiconductor.net/csc/news-details/id/19734482/name/USCi-to-develop-next-generation-SiC-devices-with-Aixtron-too.html"&gt;USCi to develop next generation SiC devices with Aixtron tool&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-1946006747657022440?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/1946006747657022440/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=1946006747657022440' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1946006747657022440'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1946006747657022440'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/usci-to-develop-next-generation-sic.html' title='USCi to develop next generation SiC devices with Aixtron tool'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-3415514738287691753</id><published>2012-01-18T08:10:00.001+09:00</published><updated>2012-01-18T08:10:08.292+09:00</updated><title type='text'>競技者向けテニスラケット</title><content type='html'>&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=300820&amp;amp;lindID=4"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;ヨネックス、競技者向けテニスラケット「ＶＣＯＲＥ」シリーズから２機種を発売&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=300815&amp;amp;lindID=4"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;ヨネックス、中・上級者向けソフトテニスラケット「「ｉ－ＮＥＸＴＡＧＥ７００」など３機種発売&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-3415514738287691753?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/3415514738287691753/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=3415514738287691753' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/3415514738287691753'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/3415514738287691753'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_18.html' title='競技者向けテニスラケット'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-8409852507568447661</id><published>2012-01-17T15:39:00.003+09:00</published><updated>2012-01-17T15:39:43.301+09:00</updated><title type='text'>SiC/GaNデバイスはPHEVとEVの普及に伴って現れる</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/COLUMN/20120113/203557/"&gt;SiC/GaNデバイスはPHEVとEVの普及に伴って現れる - 産業動向 - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-8409852507568447661?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/8409852507568447661/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8409852507568447661' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8409852507568447661'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8409852507568447661'/><link rel='alternate' type='text/html' 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src='https://blogger.googleusercontent.com/tracker/32166158593058374-6149554364062826458?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/6149554364062826458/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=6149554364062826458' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6149554364062826458'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6149554364062826458'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/siganhfet.html' title='安価なSi基板を使うGaNのダイオードとHFETの開発状況を報告'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7883595863380568897</id><published>2012-01-17T15:38:00.001+09:00</published><updated>2012-01-17T15:38:44.378+09:00</updated><title type='text'>GaN could save US mobile operators $2bn annually</title><content type='html'>&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/RFHIC_160112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;GaN could save US mobile operators $2bn annually&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-7883595863380568897?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/7883595863380568897/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=7883595863380568897' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7883595863380568897'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7883595863380568897'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/gan-could-save-us-mobile-operators-2bn.html' title='GaN could save US mobile operators $2bn annually'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-126831128171212996</id><published>2012-01-17T08:10:00.001+09:00</published><updated>2012-01-17T08:10:29.785+09:00</updated><title type='text'>2.8G～3.4GHzに対応するGaNパワー・アンプICを発売</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20120116/203623/"&gt;RFMD，2.8G～3.4GHzに対応するGaNパワー・アンプICを発売，最大パルス出力電力は380W - アナログ - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-126831128171212996?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/126831128171212996/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=126831128171212996' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/126831128171212996'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/126831128171212996'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/28g34ghzganic.html' title='2.8G～3.4GHzに対応するGaNパワー・アンプICを発売'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1741528949840732780</id><published>2012-01-17T08:09:00.001+09:00</published><updated>2012-01-17T08:09:03.169+09:00</updated><title type='text'>GaAsとGaNのRFデバイス用モデル</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20120116/203647/"&gt;三菱電機のGaAsとGaNのRFデバイス用モデル、AgilnetのEDA「ADS」向けに用意 - EDA Online - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-1741528949840732780?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/1741528949840732780/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=1741528949840732780' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1741528949840732780'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/1741528949840732780'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/gaasganrf.html' title='GaAsとGaNのRFデバイス用モデル'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5731273711728435261</id><published>2012-01-14T07:59:00.001+09:00</published><updated>2012-01-14T07:59:05.982+09:00</updated><title type='text'>グラフェンでITOを代替した有機EL素子</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20120113/203552/?ref=rss"&gt;グラフェンでITOを代替した有機EL素子、性能もITOを超える - グリーン・デバイス - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5731273711728435261?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5731273711728435261/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=5731273711728435261' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5731273711728435261'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5731273711728435261'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/itoel.html' title='グラフェンでITOを代替した有機EL素子'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6995993480630792285</id><published>2012-01-13T14:02:00.001+09:00</published><updated>2012-01-17T08:09:32.785+09:00</updated><title type='text'>OSRAM Prototypes Gallium-nitride LED Chips on Silicon</title><content type='html'>&lt;p&gt;&lt;a href="http://www.ecnmag.com/news/2012/01/OSRAM-Prototypes-Gallium-nitride-LED-Chips-on-Silicon/"&gt;OSRAM Prototypes Gallium-nitride LED Chips on Silicon | ECN: Electronic Component News&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://optics.org/news/3/1/15"&gt;Osram's silicon-based LEDs make the grade&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.laserfocusworld.com/articles/2012/01/osram-manufacture-of-gallium-nitride-led-chips-on-silicon-wafers-reaches-pilot-stage.html"&gt;Osram manufacture of gallium nitride LED chips on silicon wafers reaches pilot stage - Laser Focus World&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.electronicsnews.com.au/news/silicon-based-leds-on-the-market-in-two-years"&gt;Silicon-based LEDs on the market in two years? | Electronics News&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.ledsmagazine.com/news/9/1/19"&gt;LEDs Magazine - Osram Opto unveils R&amp;amp;D results from GaN LEDs grown on silicon&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-6995993480630792285?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/6995993480630792285/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=6995993480630792285' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6995993480630792285'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6995993480630792285'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/osram-prototypes-gallium-nitride-led.html' title='OSRAM Prototypes Gallium-nitride LED Chips on Silicon'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7905076375707204823</id><published>2012-01-13T08:08:00.001+09:00</published><updated>2012-01-13T08:08:05.786+09:00</updated><title type='text'>太陽光発電システム関連・製造装置関連の市場調査結果</title><content type='html'>&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=300499&amp;amp;lindID=5"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;富士経済、太陽光発電システム関連・製造装置関連の市場調査結果を発表&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-7905076375707204823?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/7905076375707204823/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=7905076375707204823' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7905076375707204823'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7905076375707204823'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_13.html' title='太陽光発電システム関連・製造装置関連の市場調査結果'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6343721351160940184</id><published>2012-01-13T08:06:00.001+09:00</published><updated>2012-01-13T08:06:22.621+09:00</updated><title type='text'>LED照明関連の特許総合力</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20120112/203504/?ref=rss"&gt;LED照明関連の特許総合力、首位はシャープ---パテント・リザルトの調査 - グリーン・デバイス - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-6343721351160940184?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/6343721351160940184/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=6343721351160940184' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6343721351160940184'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6343721351160940184'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/led.html' title='LED照明関連の特許総合力'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' 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rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-8151037941427863197</id><published>2012-01-11T13:18:00.001+09:00</published><updated>2012-01-19T07:58:06.241+09:00</updated><title type='text'>旭化成、紫外発光ダイオードの米ベンチャーを買収</title><content type='html'>&lt;p&gt;&lt;a href="http://www.sankeibiz.jp/business/news/120111/bsc1201111248015-n1.htm"&gt;旭化成、紫外発光ダイオードの米ベンチャーを買収　 - SankeiBiz（サンケイビズ）&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.asahi-kasei.co.jp/asahi/jp/news/2011/ze120111.html"&gt;米国Crystal IS社との買収契約締結について / プレスリリース - 旭化成&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://bourse.lci.fr/bourse-en-ligne.hts?urlAction=bourse-en-ligne.hts&amp;amp;idnews=BNW120111_00005375&amp;amp;numligne=4&amp;amp;date=120111"&gt;Bourse en ligne, actualit&amp;eacute; des cours de la 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href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=4322160984840255823' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4322160984840255823'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4322160984840255823'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/1ghz.html' title='グラフェン・トランジスタ1個でGHz帯の直接変換を実現'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' 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href="http://www.tamura-ss.co.jp/release/20120105_1/"&gt;タムラ製作所　トピックス＆リリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;"酸化ガリウム(Ga2O3)トランジスタ"を世界で初めて実現！&lt;/p&gt;&lt;/blockquote&gt;&lt;blockquote&gt;&lt;p&gt;～ 省エネルギー問題の解決に向けた"次世代パワーデバイス"候補に名乗り ～&lt;/p&gt;&lt;/blockquote&gt;&lt;div class="mj-articles"&gt;http://journal.mycom.co.jp/news/2012/01/05/052/index.html&lt;/div&gt;&lt;p&gt;&lt;script src="http://api.journal.mycom.co.jp/tensai/mj-tensai-single.js" type="text/javascript"&gt;&lt;/script&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-8150375677866709071?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/8150375677866709071/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8150375677866709071' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8150375677866709071'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8150375677866709071'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/nictsic.html' title='NICTが酸化ガリウム・トランジスタを開発、SiCより高耐圧'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-4822307516054221114</id><published>2012-01-05T12:08:00.001+09:00</published><updated>2012-01-06T08:12:39.579+09:00</updated><title type='text'>Gallium Nitride (GaN) Gaining Traction in Commercial Applications</title><content type='html'>&lt;p&gt;&lt;a href="http://www.marketwatch.com/story/strategy-analytics-gallium-nitride-gan-gaining-traction-in-commercial-applications-2012-01-04"&gt;Strategy Analytics: Gallium Nitride (GaN) Gaining Traction in Commercial Applications - MarketWatch&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.semiconductor-today.com/news_items/2012/JAN/STRAT_040112.html"&gt;Semiconductor Today&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;GaN gaining traction in commercial applications&lt;/p&gt;&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://microelectronics.cbronline.com/news/gallium-nitride-gan-increasing-its-grip-in-commercial-applications-report-050112"&gt;Gallium Nitride (GaN) increasing its grip in commercial applications: Report - Computer Business Review&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-4822307516054221114?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/4822307516054221114/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=4822307516054221114' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4822307516054221114'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4822307516054221114'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/gallium-nitride-gan-gaining-traction-in.html' title='Gallium Nitride (GaN) Gaining Traction in Commercial Applications'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-27862320601472014</id><published>2012-01-05T12:07:00.003+09:00</published><updated>2012-01-05T12:07:44.729+09:00</updated><title type='text'>カギ握る次世代素材技術、省エネ・高性能を追求</title><content type='html'>&lt;p&gt;&lt;a href="http://www.nikkan.co.jp/news/nkx0820120104cbaa.html"&gt;カギ握る次世代素材技術、省エネ・高性能を追求:日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-27862320601472014?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/27862320601472014/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=27862320601472014' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/27862320601472014'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/27862320601472014'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_1173.html' title='カギ握る次世代素材技術、省エネ・高性能を追求'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6551901174112576794</id><published>2012-01-05T12:07:00.001+09:00</published><updated>2012-01-05T12:07:05.061+09:00</updated><title type='text'>窒化ガリウムパワー半導体の実用化にめど</title><content type='html'>&lt;p&gt;&lt;a href="http://www.asahi.com/digital/nikkanko/NKK201201040002.html"&gt;asahi.com（朝日新聞社）：ローム、窒化ガリウムパワー半導体の実用化にめど－評価用を年度内に提供 - 日刊工業新聞ニュース - デジタル&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-6551901174112576794?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/6551901174112576794/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=6551901174112576794' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6551901174112576794'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6551901174112576794'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_2426.html' title='窒化ガリウムパワー半導体の実用化にめど'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7362428847935284198</id><published>2012-01-05T12:04:00.003+09:00</published><updated>2012-01-05T12:04:55.166+09:00</updated><title type='text'>カーボンナノチューブの電気伝導度評価技術を開発</title><content type='html'>&lt;p&gt;&lt;a href="http://www.hellodd.com/japan/news/news_view.asp?t=dd_jp_news&amp;amp;menu=&amp;amp;mark=2790"&gt;HelloDD.com/japan/&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;カーボンナノチューブの電気伝導度評価技術を開発&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-7362428847935284198?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/7362428847935284198/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=7362428847935284198' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7362428847935284198'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7362428847935284198'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post_05.html' title='カーボンナノチューブの電気伝導度評価技術を開発'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5289599803195839391</id><published>2012-01-05T12:04:00.001+09:00</published><updated>2012-01-05T12:04:08.314+09:00</updated><title type='text'>CMP処理後のマイクロクラック</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/research/patent/2012/01_1/index.html"&gt;CMP処理後のマイクロクラック検査装置&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5289599803195839391?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5289599803195839391/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=5289599803195839391' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5289599803195839391'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5289599803195839391'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/cmp.html' title='CMP処理後のマイクロクラック'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7793915880034351075</id><published>2012-01-05T12:00:00.001+09:00</published><updated>2012-01-05T12:00:09.347+09:00</updated><title type='text'>あけましておめでとうございます</title><content type='html'>&lt;p&gt;本年もどうぞよろしくおねがいします。&lt;/p&gt;&lt;p&gt;毎年恒例になった干支の狛犬めぐり・・・辰は伏見稲荷の神寶神社（かんだからじんじゃ）にありました。&lt;/p&gt;&lt;p&gt;&lt;img src="http://lh6.ggpht.com/-sfge2YHi_T4/TwUQxNWAixI/AAAAAAAAB8c/rBMbrv3h63k/%25255BUNSET%25255D.jpg" alt="" width="400" height="300" /&gt;&lt;/p&gt;&lt;p&gt;&lt;img src="http://lh3.ggpht.com/-6piyk1XJGRc/TwUQ6ZNIIAI/AAAAAAAAB8k/DRZBsTwvPLg/%25255BUNSET%25255D.jpg" alt="" width="400" height="300" /&gt;&lt;/p&gt;&lt;p&gt;&lt;img src="http://lh3.ggpht.com/-1yu1e-pyBaA/TwURCl-n4qI/AAAAAAAAB8s/15T7VZQdiLs/%25255BUNSET%25255D.jpg" alt="" width="400" height="300" /&gt;&lt;/p&gt;&lt;p&gt;元旦が暖かかったせいかかなりの人でしたが、人ごみをさけ裏から回って行きました。&lt;/p&gt;&lt;p&gt;おみくじがかわいいのでパシャリ。&lt;/p&gt;&lt;p&gt;&lt;img src="http://lh3.ggpht.com/-Tbwc2KAhQ-g/TwURu0Cy4wI/AAAAAAAAB80/IX3nGTWj8Bk/%25255BUNSET%25255D.jpg" alt="" width="400" height="300" /&gt;&lt;/p&gt;&lt;p&gt;今年はどんな年になるか分かりませんが、成果を出す努力をしていきたいと思っております。&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-7793915880034351075?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/7793915880034351075/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=7793915880034351075' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7793915880034351075'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7793915880034351075'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2012/01/blog-post.html' title='あけましておめでとうございます'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><media:thumbnail xmlns:media='http://search.yahoo.com/mrss/' url='http://lh6.ggpht.com/-sfge2YHi_T4/TwUQxNWAixI/AAAAAAAAB8c/rBMbrv3h63k/s72-c/%25255BUNSET%25255D.jpg' height='72' width='72'/><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6339421736332390277</id><published>2011-12-31T13:14:00.001+09:00</published><updated>2011-12-31T13:14:12.635+09:00</updated><title type='text'>６億円投じ試験・評価装置</title><content type='html'>&lt;p&gt;&lt;a href="http://www.nikkan.co.jp/news/nkx0820111229cbah.html?news-t1229"&gt;ノリタケ、三好事業所に研究拠点－６億円投じ試験・評価装置:日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-6339421736332390277?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/6339421736332390277/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=6339421736332390277' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6339421736332390277'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/6339421736332390277'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/blog-post_31.html' title='６億円投じ試験・評価装置'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-3741303253206632987</id><published>2011-12-28T08:10:00.003+09:00</published><updated>2011-12-28T08:10:57.749+09:00</updated><title type='text'>銅ワイヤのボンディング技術を開発</title><content type='html'>&lt;p&gt;&lt;a href="http://www.nikkan.co.jp/news/nkx0620111228baam.html?news-t1228"&gt;超音波工業、銅ワイヤのボンディング技術を開発－大電流に対応:日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6706969761238071887</id><published>2011-12-20T08:00:00.001+09:00</published><updated>2011-12-20T08:00:38.283+09:00</updated><title type='text'>Wireless Infrastructure Drives RF Power Semiconductor Markets to Well over $1 Billion</title><content type='html'>&lt;p&gt;&lt;a href="http://www.marketwatch.com/story/wireless-infrastructure-drives-rf-power-semiconductor-markets-to-well-over-1-billion-says-abi-research-2011-12-19"&gt;Wireless Infrastructure Drives RF Power Semiconductor Markets to Well over $1 Billion, Says ABI Research - MarketWatch&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-6706969761238071887?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link 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src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5887285606484406958</id><published>2011-12-14T16:10:00.001+09:00</published><updated>2011-12-14T16:10:17.395+09:00</updated><title type='text'>公取委が新日鉄と住金の合併を承認</title><content type='html'>&lt;p&gt;&lt;a href="http://jp.reuters.com/article/topNews/idJPTYE7BD04520111214?feedType=RSS&amp;amp;feedName=topNews&amp;amp;utm_source=twitterfeed&amp;amp;utm_medium=twitter&amp;amp;utm_campaign=Feed%3A+reuters%2FJPTopNews+%28News+%2F+JP+%2F+Top+News%29"&gt;公取委が新日鉄と住金の合併を承認、世界２位の製鉄会社誕生へ | Reuters&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://mainichi.jp/select/biz/news/20111214k0000e020210000c.html"&gt;公取委：新日鉄と住金の合併、条件付きで承認 － 毎日ｊｐ(毎日新聞)&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.asahi.com/business/update/1214/TKY201112140380.html"&gt;asahi.com（朝日新聞社）：新日鉄・住金の合併、公取委が承認　粗鋼生産世界２位 - ビジネス・経済&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5887285606484406958?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5887285606484406958/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=5887285606484406958' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5887285606484406958'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5887285606484406958'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/blog-post_2339.html' title='公取委が新日鉄と住金の合併を承認'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2830104944572098029</id><published>2011-12-14T08:09:00.001+09:00</published><updated>2011-12-14T08:09:44.711+09:00</updated><title type='text'>ＫＡＩＳＴと三星が総天然色ＬＥＤ技術を開発</title><content type='html'>&lt;p&gt;&lt;a href="http://japan.donga.com/srv/service.php3?bicode=020000&amp;amp;biid=2011121481328"&gt;donga.com[Japanese donga]&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;さらに薄くて鮮やかに&amp;hellip;ＫＡＩＳＴと三星が総天然色ＬＥＤ技術を開発&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2830104944572098029?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2830104944572098029/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=2830104944572098029' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2830104944572098029'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2830104944572098029'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/blog-post_14.html' title='ＫＡＩＳＴと三星が総天然色ＬＥＤ技術を開発'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-668381576751014160</id><published>2011-12-13T09:10:00.001+09:00</published><updated>2011-12-13T09:10:44.983+09:00</updated><title type='text'>Gallium nitride based devices set to bring substantial boost to power efficiency</title><content type='html'>&lt;p&gt;&lt;a href="http://www.newelectronics.co.uk/electronics-technology/gallium-nitride-based-devices-set-to-bring-substantial-boost-to-power-efficiency/38902/"&gt;Gallium nitride based devices set to bring substantial boost to power efficiency&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-668381576751014160?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/668381576751014160/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=668381576751014160' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/668381576751014160'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/668381576751014160'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/gallium-nitride-based-devices-set-to.html' title='Gallium nitride based devices set to bring substantial boost to power efficiency'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-8854430594508129278</id><published>2011-12-13T07:59:00.003+09:00</published><updated>2011-12-13T07:59:35.241+09:00</updated><title type='text'>Invited Addressでは酸化物TFTとグラフェンがテーマに</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20111212/202506/?rt=nocnt"&gt;【IDW】基調講演は東芝とLG、Invited Addressでは酸化物TFTとグラフェンがテーマに - FPD - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-8854430594508129278?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/8854430594508129278/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8854430594508129278' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8854430594508129278'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8854430594508129278'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/invited-addresstft.html' title='Invited Addressでは酸化物TFTとグラフェンがテーマに'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-4656630053217577289</id><published>2011-12-13T07:59:00.001+09:00</published><updated>2011-12-13T07:59:00.677+09:00</updated><title type='text'>NGK reveals GaN substrates for use in HB-LEDs</title><content type='html'>&lt;p&gt;&lt;a href="http://www.compoundsemiconductor.net/csc/news-details/id/19734360/name/NGK-reveals-GaN-substrates-for-use-in-HBLEDs.html"&gt;NGK reveals GaN substrates for use in HB-LEDs&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-4656630053217577289?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/4656630053217577289/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=4656630053217577289' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4656630053217577289'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/4656630053217577289'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/ngk-reveals-gan-substrates-for-use-in.html' title='NGK reveals GaN substrates for use in HB-LEDs'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-8930110561010199560</id><published>2011-12-12T14:51:00.001+09:00</published><updated>2011-12-12T14:51:01.956+09:00</updated><title type='text'>2015年発売の次世代EV搭載を目指す</title><content type='html'>&lt;p&gt;&lt;a href="http://eetimes.jp/ee/articles/1112/09/news032.html"&gt;パワー半導体 SiCデバイス：デンソーがSiCデバイス開発を加速、2015年発売の次世代EV搭載を目指す - EE Times Japan&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-8930110561010199560?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/8930110561010199560/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8930110561010199560' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8930110561010199560'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8930110561010199560'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/2015ev.html' title='2015年発売の次世代EV搭載を目指す'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-5482476152106842134</id><published>2011-12-12T14:38:00.001+09:00</published><updated>2011-12-12T14:38:13.594+09:00</updated><title type='text'>高電圧差動プローブ「ＴＨＤＰ０１００型」など４機種を発売</title><content type='html'>&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=298895&amp;amp;lindID=4"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;テクトロニクス、高電圧差動プローブ「ＴＨＤＰ０１００型」など４機種を発売&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5482476152106842134?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5482476152106842134/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=5482476152106842134' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5482476152106842134'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5482476152106842134'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/blog-post_2005.html' title='高電圧差動プローブ「ＴＨＤＰ０１００型」など４機種を発売'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-919344399218537151</id><published>2011-12-12T13:59:00.001+09:00</published><updated>2011-12-13T08:32:13.988+09:00</updated><title type='text'>サファイア大型基板の事業化で子会社に量産ラインを設置</title><content type='html'>&lt;p&gt;&lt;a href="http://release.nikkei.co.jp/detail.cfm?relID=298876&amp;amp;lindID=4"&gt;日経プレスリリース&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;&lt;p&gt;住友金属鉱山、サファイア大型基板の事業化で子会社に量産ラインを設置&lt;/p&gt;&lt;/blockquote&gt;&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20111212/202494/?ST=device&amp;amp;ref=rss"&gt;住友金属鉱山、白色LEDなど向けに6インチのサファイア基板を量産 - 電子部品 - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.nikkan.co.jp/news/nkx0820111213cbal.html"&gt;住友鉱山、直径６インチの大型サファイア基盤生産を来秋開始:日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-919344399218537151?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/919344399218537151/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=919344399218537151' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/919344399218537151'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/919344399218537151'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/blog-post_12.html' title='サファイア大型基板の事業化で子会社に量産ラインを設置'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2304852518747097787</id><published>2011-12-10T13:25:00.001+09:00</published><updated>2011-12-10T13:25:46.868+09:00</updated><title type='text'>研究会が終わりました</title><content type='html'>&lt;p&gt;今年の研究会も終わりました。&lt;/p&gt;&lt;p&gt;新しく布ポスターを作り直し研究者向けの加工内容をアピールさせていただきました。&lt;/p&gt;&lt;p&gt;&lt;img src="http://lh3.ggpht.com/-Mdn99YITFcU/TuLe2TezA3I/AAAAAAAAB5k/-UO3NK9Aaco/%25255BUNSET%25255D.jpg" alt="" width="400" height="350" /&gt;&lt;/p&gt;&lt;p&gt;&amp;nbsp;&lt;/p&gt;&lt;p&gt;条件が整えば無償でサンプル加工をするチラシも配布しました。&lt;/p&gt;&lt;p&gt;先着１０枚なのでどれぐらいの申し込みがあるか楽しみです。&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-2304852518747097787?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/2304852518747097787/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=2304852518747097787' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2304852518747097787'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/2304852518747097787'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/blog-post_3931.html' title='研究会が終わりました'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><media:thumbnail xmlns:media='http://search.yahoo.com/mrss/' url='http://lh3.ggpht.com/-Mdn99YITFcU/TuLe2TezA3I/AAAAAAAAB5k/-UO3NK9Aaco/s72-c/%25255BUNSET%25255D.jpg' height='72' width='72'/><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7390405913489883134</id><published>2011-12-10T13:11:00.001+09:00</published><updated>2011-12-10T13:11:48.045+09:00</updated><title type='text'>半導体メーカー、省エネパワー半導体の基板材を大口径化</title><content type='html'>&lt;p&gt;&lt;a href="http://www.asahi.com/digital/nikkanko/NKK201112070016.html"&gt;asahi.com（朝日新聞社）：半導体メーカー、省エネパワー半導体の基板材を大口径化 - 日刊工業新聞ニュース - デジタル&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' 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rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-3465779535407995784</id><published>2011-12-10T13:08:00.001+09:00</published><updated>2011-12-10T13:08:32.203+09:00</updated><title type='text'>先端加工技術講演会「白色LEDに関わる精密加工技術の最前線」</title><content type='html'>&lt;p&gt;&lt;a href="http://www.aist.go.jp/aist_j/event/ev2012/ev20120131_2/ev20120131_2.html"&gt;2012年1月31日　先端加工技術講演会「白色LEDに関わる精密加工技術の最前線」&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-3465779535407995784?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/3465779535407995784/comments/default' title='コメントの投稿'/><link 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rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-7779441199801629690</id><published>2011-12-08T19:51:00.001+09:00</published><updated>2011-12-08T19:51:11.663+09:00</updated><title type='text'>SiCダイオードを搭載した鉄道車両向けインバータ装置を開発</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20111208/202356/?ST=device&amp;ref=rss"&gt;&amp;#26481;&amp;#33437;&amp;#12364;SiC&amp;#12480;&amp;#12452;&amp;#12458;&amp;#12540;&amp;#12489;&amp;#12434;&amp;#25645;&amp;#36617;&amp;#12375;&amp;#12383;&amp;#37444;&amp;#36947;&amp;#36554;&amp;#20001;&amp;#21521;&amp;#12369;&amp;#12452;&amp;#12531;&amp;#12496;&amp;#12540;&amp;#12479;&amp;#35013;&amp;#32622;&amp;#12434;&amp;#38283;&amp;#30330;&amp;#12289;2012&amp;#24180;&amp;#20013;&amp;#12395;&amp;#35430;&amp;#39443;&amp;#36208;&amp;#34892;&amp;#38283;&amp;#22987; - &amp;#38651;&amp;#23376;&amp;#37096;&amp;#21697; - Tech-On&amp;#65281;&lt;/a&gt;&lt;/p&gt; &lt;br/&gt; &lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-7779441199801629690?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/7779441199801629690/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=7779441199801629690' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7779441199801629690'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/7779441199801629690'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/sic.html' title='SiCダイオードを搭載した鉄道車両向けインバータ装置を開発'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1757662275291873419</id><published>2011-12-07T08:37:00.001+09:00</published><updated>2011-12-10T13:07:05.979+09:00</updated><title type='text'>絶縁体基板にグラフェンが吸着する機構解明</title><content type='html'>&lt;p&gt;&lt;a href="http://news.google.com/news/url?sa=t&amp;amp;fd=R&amp;amp;usg=AFQjCNFjtP6hA_xyuCYvsw3JpX9Aavqsxw&amp;amp;url=http://www.nikkan.co.jp/news/nkx0720111207eaan.html?news-t1207"&gt;産総研、絶縁体基板にグラフェンが吸着する機構解明－次世代デバイスに道 - 日刊工業新聞&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.jst.go.jp/pr/announce/20111207/index.html"&gt;共同発表：絶縁体基板表面へのグラフェンの吸着機構を理論的に解明（ポストシリコンに向けての一歩）&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-1757662275291873419?l=k-nex.blogspot.com' alt='' 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class="mj-articles"&gt;http://journal.mycom.co.jp/news/2011/12/08/057/index.html&lt;/div&gt;&lt;p&gt;&lt;script src="http://api.journal.mycom.co.jp/tensai/mj-tensai-single.js" type="text/javascript"&gt;&lt;/script&gt;&lt;/p&gt;&lt;p&gt;&amp;nbsp;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.compoundsemi.com/documents/articles/gsedoc/121172.html"&gt;Compound Semiconductors Online - Documents&lt;/a&gt;&lt;/p&gt;&lt;blockquote&gt;Nippon Steel Produces First Six-inch Diameter Single Crystal SiC Waffer in Lab&lt;/blockquote&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-8975782195588010215?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/8975782195588010215/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8975782195588010215' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8975782195588010215'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8975782195588010215'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/6sic.html' title='「国内勢としては初」、新日鉄がパワー素子向け6インチSiC基板を開発'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' 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height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-5433762835425541638?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/5433762835425541638/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=5433762835425541638' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5433762835425541638'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/5433762835425541638'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/fet200mm.html' title='グラフェンFETを200mmラインで製造'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-367350711509282113</id><published>2011-12-06T12:29:00.001+09:00</published><updated>2011-12-06T12:29:07.316+09:00</updated><title type='text'>MOSトランジスタのチャネル材料に手をつけるときが来た</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20111206/202236/?rt=nocnt"&gt;&amp;#12304;IEDM&amp;#12305;Intel&amp;#12398;Bohr&amp;#27663;&amp;#12364;&amp;#22522;&amp;#35519;&amp;#35611;&amp;#28436;&amp;#12289;&amp;#12300;MOS&amp;#12488;&amp;#12521;&amp;#12531;&amp;#12472;&amp;#12473;&amp;#12479;&amp;#12398;&amp;#12481;&amp;#12515;&amp;#12493;&amp;#12523;&amp;#26448;&amp;#26009;&amp;#12395;&amp;#25163;&amp;#12434;&amp;#12388;&amp;#12369;&amp;#12427;&amp;#12392;&amp;#12365;&amp;#12364;&amp;#26469;&amp;#12383;&amp;#12301; - &amp;#21322;&amp;#23566;&amp;#20307;&amp;#35069;&amp;#36896; - Tech-On&amp;#65281;&lt;/a&gt;&lt;/p&gt; &lt;br/&gt; &lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/32166158593058374-367350711509282113?l=k-nex.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://k-nex.blogspot.com/feeds/367350711509282113/comments/default' title='コメントの投稿'/><link rel='replies' type='text/html' href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=367350711509282113' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/367350711509282113'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/367350711509282113'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/mos.html' title='MOSトランジスタのチャネル材料に手をつけるときが来た'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-6503103944693375628</id><published>2011-12-06T09:28:00.001+09:00</published><updated>2011-12-06T09:28:17.300+09:00</updated><title type='text'>ＳｉＣ研究会に出展します</title><content type='html'>&lt;p&gt;&lt;p&gt;１２月８日（木）～９日（金）に&lt;a href="http://winc-aichi.jp/"&gt;愛知県産業労働センター（ウインクあいち）&lt;/a&gt;で開催される「&lt;a href="http://www.opt.ees.saitama-u.ac.jp/scrm2011/"&gt;第20回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会&lt;/a&gt;」に出展します。&lt;/p&gt;&lt;p&gt;小間番号は【&lt;span style="font-size: x-large;"&gt;&lt;strong&gt;&lt;span style="color: 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href='http://www.blogger.com/comment.g?blogID=32166158593058374&amp;postID=8783572835927775393' title='0 件のコメント'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8783572835927775393'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/32166158593058374/posts/default/8783572835927775393'/><link rel='alternate' type='text/html' href='http://k-nex.blogspot.com/2011/12/ibm280ghzfet.html' title='IBMが280GHz動作のグラフェンFETを発表'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-1328479540985075838</id><published>2011-12-05T08:00:00.001+09:00</published><updated>2011-12-10T13:06:36.777+09:00</updated><title type='text'>「耐圧600Vで1mΩcm2を下回るのは世界初」</title><content type='html'>&lt;p&gt;&lt;a href="http://techon.nikkeibp.co.jp/article/NEWS/20111202/202139/?ref=rss"&gt;【IEDMプレ】「耐圧600Vで1m&amp;Omega;cm&lt;sup&gt;2&lt;/sup&gt;を下回るのは世界初」、ロームが新しいトレンチ型SiC製MOSFETを試作 - グリーン・デバイス - Tech-On！&lt;/a&gt;&lt;/p&gt;&lt;p&gt;&lt;a href="http://www.asahi.com/digital/nikkanko/NKK201112050010.html"&gt;asahi.com（朝日新聞社）：ローム、電力損失を大幅に抑えたＭＯＳＦＥＴ開発 - 日刊工業新聞ニュース - デジタル&lt;/a&gt;&lt;/p&gt;&lt;div class="mj-articles"&gt;http://journal.mycom.co.jp/news/2011/12/05/040/index.html&lt;/div&gt;&lt;p&gt;&lt;script src="http://api.journal.mycom.co.jp/tensai/mj-tensai-single.js" 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epi'/><author><name>k-nex</name><uri>http://www.blogger.com/profile/13694634354510870427</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='27' src='http://1.bp.blogspot.com/_6bb2O8LU-VQ/Sp3u0ncP9SI/AAAAAAAAAQM/Glhscy1mLTE/S220/SiC_Picture.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-32166158593058374.post-2219899233229658672</id><published>2011-12-02T09:43:00.001+09:00</published><updated>2011-12-02T09:43:03.213+09:00</updated><title type='text'>RFMD's GaN CATV Hybrids Win Platinum Awards</title><content type='html'>&lt;p&gt;&lt;a href="http://www.marketwatch.com/story/rfmds-gan-catv-hybrids-win-platinum-awards-from-communications-technology-magazine-2011-12-01"&gt;RFMD's GaN CATV Hybrids Win Platinum Awards From Communications Technology Magazine - MarketWatch&lt;/a&gt;&lt;/p&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' 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